Photoresist strip removing polymer

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The etching rate and surface morphology associated with different etching conditions e.This application is a continuation of application Ser.This invention relates generally to the removal of photoresist from a semiconductor wafer and more particularly to a process for removing photoresist and a polymer using an aqueous oxidant bath e.The manufacture of microelectronic devices uses a range of solvents in a variety of applications.Leon - Olin Micro Electronics Material.This application claims priority to U.

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This is a divisional of application Ser.

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This is a continuation-in-part of prior application Ser.Resist removal is often carried out in an oxygen plasma where oxygen radicals reacts with the photoresist and the by-products are moved away from the chamber.The present invention generally relates to a method for in-situ removal of unwanted film layers from a semiconductor substrate and more particularly, relates to a method for in-situ removal of photoresist layers and sidewall polymers from a surface of a wafer in a photoresist strip chamber by adding a magnetic field in the chamber to increase the ion energy of the plasma ions generated such that both the photoresist layers and the sidewall passivation layers of polymer are removed simultaneously.

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